2SA1742

SPTECH Product Specification SPTECH Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO= -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Pulse -12 A IB Base Current-Continuous -2.5 A Total Power Dissipation @TC=25℃ 25 Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ W PT SPTECH website：www.superic-tech.com 1 2SA1742 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1742 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-Emitter Voltage IC= -10mA; IB= 0 -60 V VCBO Collector-Emitter Voltage IE= -1mA; IC= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -80V ; IE=0 -10 μA ICEO Collector Cutoff Current VCE= -50V; IB=0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100 hFE-2 DC Current Gain IC= -1.0A ; VCE= -2V 100 hFE-3 DC Current Gain IC= -3.0A ; VCE= -2V 60 400 Switching times ton Turn-on Time tstg Storage Time tf  IC= -3.0A ,RL= 17Ω, IB1= -IB2= -0.15A,VCC≈-50V Fall Time hFE-2 Classifications M L K 100-200 150-300 200-400 SPTECH website：www.superic-tech.com 2 0.3 μs 1.5 μs 0.3 μs