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2SA940

2SA940

  • 厂商:

    SPTECH(质超)

  • 封装:

    TO220C

  • 描述:

    硅PNP功率晶体管

  • 数据手册
  • 价格&库存
2SA940 数据手册
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W SPTECH website:www.superic-tech.com 1 SPTECH Product Specification 2SA940 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.85 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -0.5A ; VCE= -10V 40 Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V;ftest= 1MHz 4 fT CONDITIONS SPTECH website:www.superic-tech.com MIN TYP. MAX UNIT 140 MHz 2
2SA940 价格&库存

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2SA940
  •  国内价格
  • 5+1.59635
  • 50+1.21425
  • 150+1.08789
  • 500+0.93021
  • 2400+0.86001
  • 4800+0.81789

库存:59

2SA940
    •  国内价格
    • 1+0.78000
    • 10+0.72000
    • 30+0.70800

    库存:0