2SC3058

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(sus)= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; RBE= ∞ 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1 mA; IE= 0 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A; IB= 4A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 VCB= 500V; IE= 0; TC= 100℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 20A; VCE= 5V 10 Current-Gain—Bandwidth Product IC= 4A; VCE= 10V 15 Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT COB 40 MHz 420 pF Switching times tr tstg tf Rise Time Storage Time IC= 20A, IB1= -IB2= 4A; VCC= 150V Fall Time SPTECH website：www.superic-tech.com 0.5 μs 3.0 μs 0.3 μs 2