2SC2625

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2625 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ VEBO Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2625 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 450V ; IE=0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 4A ; VCE= 5V 1.0 μs 2.0 μs 1.0 μs 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 7.5A , IB1= -IB2= 1.5A RL= 20Ω;PW=20μs Duty Cycle≤2% Fall Time SPTECH website：www.superic-tech.com 2