SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3835
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.2
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
100
μA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
70
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= 12V
20
Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
fT
COB
CONDITIONS
MIN
TYP.
MAX
120
UNIT
V
220
MHz
110
pF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
Fall Time
0.5
μs
3.0
μs
0.5
μs
hFE Classifications
O
Y
G
70-120
100-200
160-220
SPTECH website:www.superic-tech.com
2
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