2SC3856

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SC3856 SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 200V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 3A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 300 pF Current-Gain—Bandwidth Product IE=-0.5A ; VCE= 12V 20 MHz 0.5 μs 1.8 μs 0.6 μs fT CONDITIONS MIN TYP. MAX 180 UNIT V 50 180 Switching times ton Turn-on Time tstg Storage Time tf  IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V Fall Time hFE Classifications O P Y 50-100 70-140 90-180 SPTECH website：www.superic-tech.com 2