2SC4110

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4110 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 8 A PC TJ Tstg PW300s, duty cycle10% Collector Power Dissipation @ TC=25℃ 160 Collector Power Dissipation @ Ta=25℃ 2.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 16A; IB= 3.2A 1.5 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3.2A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 16A ; VCE= 5V 10 hFE-3 DC Current Gain IC= 10mA ; VCE= 5V 10 Current-Gain—Bandwidth Product IC= 3.2A ; VCE= 10V 20 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 300 pF fT COB 50 Switching Times ton Turn-on Time tstg Storage Time tf  IC= 20A, IB1= 4A; IB2= -8A RL= 10Ω; VCC= 200V Fall Time 0.5 μs 2.5 μs 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 SPTECH website：www.superic-tech.com 2