2SC4550

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4550 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage: VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 7.0 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4550 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA,Ib=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 10 μA ICER Collector Cutoff Current VCE= 60V ; RBE= 50Ω,Ta=125℃ 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.7A ; VCE= 2V 100 hFE-2 DC Current Gain IC= 1.5A ; VCE= 2V 100 hFE-3 DC Current Gain IC= 4.0A ; VCE= 2V 60 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V fT CONDITIONS MIN TYP. MAX 60 UNIT V 400 100 pF 30 MHz Switching times ton Turn-on Time tstg Storage Time tf  IC= 4.0A ,RL= 12.5Ω, IB1= -IB2= 0.2A,VCC≈ 50V Fall Time 0.3 μs 1.5 μs 0.3 μs hFE-2 Classifications M L K 100-200 150-300 200-400 SPTECH website：www.superic-tech.com 2