SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC5198
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 7A
·Good Linearity of hFE
·Complement to Type 2SA1941
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC5198
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 140V ; IE=0
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
170
pF
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
30
MHz
fT
CONDITIONS
MIN
TYP.
MAX
140
UNIT
V
160
hFE-1 Classifications
R
0
55-110
80-160
SPTECH website:www.superic-tech.com
2
很抱歉,暂时无法提供与“2SC5198”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+2.86000
- 10+2.64000
- 30+2.59600