SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·High DC current amplifier rate
hFE: 50-200@VCE= 5V,IC= 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power audio, disk head positioners and other linear
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VCEX
Collector-Emitter Voltage
VEB= 5V
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-30
A
IB
Base Current-Continuous
-1.5
A
PT
Total Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.63
℃/W
SPTECH website:www.superic-tech.com
1
MJW0302A
SPTECH Product Specification
MJW0302A
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=- 100mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10A; IB=- 1A
-0.6
V
VBE(on)
Base-Emitter On Voltage
IC= -8A;VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB=- 250V
-50
mA
ICEO
Collector Cutoff Current
VCE=- 250V
-50
mA
IEBO
Emitter Cutoff Current
VEB=- 5V
-5
mA
hFE-1
DC Current Gain
IC= -0.1A; VCE=-5V
75
150
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
75
150
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
75
150
hFE-4
DC Current Gain
IC=- 5A; VCE= -5V
45
hFE-5
DC Current Gain
IC=- 8A; VCE= -5V
15
SPTECH website:www.superic-tech.com
CONDITIONS
2
MIN
TYP.
MAX
-250
UNIT
V
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