MJW1302A

SPTECH Product Specification SPTECH Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE: 50-200@VCE= 5V,IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VCEX Collector-Emitter Voltage VEB= 5V -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -25 A IB Base Current-Continuous -1.5 A PT Total Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W SPTECH website：www.superic-tech.com 1 MJW1302A SPTECH Product Specification MJW1302A SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB=- 1A -0.6 V VBE(on) Base-Emitter On Voltage IC= -8A;VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB=- 230V -50 mA ICEO Collector Cutoff Current VCE=- 230V -50 mA IEBO Emitter Cutoff Current VEB=- 5V -5 mA hFE-1 DC Current Gain IC= -0.1A; VCE=-5V 50 200 hFE-2 DC Current Gain IC= -1A; VCE= -5V 50 200 hFE-3 DC Current Gain IC= -3A; VCE= -5V 50 200 hFE-4 DC Current Gain IC=- 5A; VCE= -5V 45 hFE-5 DC Current Gain IC=- 8A; VCE= -5V 15 SPTECH website：www.superic-tech.com CONDITIONS 2 MIN TYP. MAX -230 UNIT V