MJW3281A

SPTECH Product Specification SPTECH Silicon NPN Power Transistor DESCRIPTION ·High DC current amplifier rate hFE: 50-200@VCE= 5V,IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous 1.5 A PC Total Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W SPTECH website：www.superic-tech.com 1 MJW3281A SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJW3281A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2 V VBE(on) Base-Emitter Saturation Voltage IC= 8A; VCE= 5V 2 V ICBO Collector Cutoff Current VCB= 230V ; IE=0 50 µA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 µA hFE-1 DC Current Gain IC= 100mA ; VCE= 5V 50 200 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 50 200 hFE-3 DC Current Gain IC= 8A ; VCE= 5V 45 hFE-4 DC Current Gain IC= 15A ; VCE= 5V 12 SPTECH website：www.superic-tech.com 2 MIN MAX 230 UNIT V