NJW1302G

SPTECH Product Specification SPTECH Silicon PNP Power Transistor DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VCEX Collector-Emitter Voltage VEB= 5V -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -1.6 A PT Total Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W SPTECH website：www.superic-tech.com 1 NJW1302G SPTECH Product Specification NJW1302G SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=- 0.8A -0.6 V VBE(on) Base-Emitter On Voltage IC= -8A;VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB=- 250V -50 mA ICEO Collector Cutoff Current VCE=- 250V -50 mA IEBO Emitter Cutoff Current VEB=- 5V -5 mA hFE-1 DC Current Gain IC= -0.1A; VCE=-5V 75 150 hFE-2 DC Current Gain IC= -1A; VCE= -5V 75 150 hFE-3 DC Current Gain IC= -3A; VCE= -5V 75 150 hFE-4 DC Current Gain IC=- 5A; VCE= -5V 60 hFE-5 DC Current Gain IC=- 8A; VCE= -5V 45 SPTECH website：www.superic-tech.com 2 MIN TYP. MAX -250 UNIT V