NJW3281G

SPTECH Product Specification SPTECH Silicon NPN Power Transistor DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VCEX Collector-Emitter Voltage VEB= 5V 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 1.6 A PT Total Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W SPTECH website：www.superic-tech.com 1 NJW3281G SPTECH Product Specification NJW3281G SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 0.6 V VBE(on) Base-Emitter On Voltage IC= 8A;VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 250V 50 mA ICEO Collector Cutoff Current VCE= 250V 50 mA IEBO Emitter Cutoff Current VEB= 5V 5 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 75 150 hFE-2 DC Current Gain IC= 1A; VCE= 5V 75 150 hFE-3 DC Current Gain IC= 3A; VCE= 5V 75 150 hFE-4 DC Current Gain IC= 5A; VCE= 5V 60 hFE-5 DC Current Gain IC= 8A; VCE= 5V 45 SPTECH website：www.superic-tech.com 2 MIN TYP. MAX 250 UNIT V