NJW0281G

SPTECH Product Specification SPTECH Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 NJW0281G SPTECH Product Specification NJW0281G SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 1.0 V VBE(on) Base−Emitter On Voltage IC = 5.0 A, VCE = 5.0 V 1.2 V ICBO Collector Cutoff Current VCB= 250V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE DC Current Gain IC= 0.5A ; VCE= 5V 75 150 hFE1 DC Current Gain IC= 1A ; VCE= 5V 75 150 hFE2 DC Current Gain IC= 3A ; VCE= 5V 75 150 COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz Current-Gain—Bandwidth Product IC=-1A ; VCE= 5V ;ftest= 1.0MHz fT SPTECH website：www.superic-tech.com CONDITIONS 2 MIN TYP. MAX 250 V 700 20 UNIT pF MHz