BUX48A

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BUX48A DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage (VBE= -1.5V) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current-peak 20 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor BUX48A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ 1.5 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A 5.0 V Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ 1.6 1.6 V ICBO Collector Cutoff Current VCE=1000V; IE= 0 VCE=100V; IE= 0;TC=125℃ 0.2 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 8A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 350 pF VBE(sat) CONDITIONS SPTECH website：www.superic-tech.com MIN MAX UNIT 8 2