2SC3320

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3320 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -65~150 ℃ VEBO Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SC3320 SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 6A ; VCE= 5V 0.5 μs 1.5 μs 0.15 μs 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 7.5A , IB1= 1.5A; IB2= -3A RL= 20Ω;PW=20μs Duty≤2% Fall Time SPTECH website：www.superic-tech.com 2