2SC5570

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5570 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage: V(BR)CBO= 1700V(Min) APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 28 A ICM Collector Current-Pulse 56 A PC Collector Power Dissipation @ TC=25℃ 220 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5859 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB=5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A; IB=5A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1700V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 30 hFE-2 DC Current Gain IC= 20A; VCE= 5V 4 8 tstg Storage Time 800 UNIT V 3.0 μs 0.2 μs IC= 12A, IB1=2.4A; IB2= -4.8A tf Fall Time SPTECH website：www.superic-tech.com 2