2SC5027

Product Specification Silicon NPN Power Transistor 2SC5027 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SPTECH website：www.superic-tech.com Product Specification Silicon NPN Power Transistor 2SC5027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 850 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 0.2A; VCE= 5V 10 hFE DC Current Gain IC= 1A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 60 pF Current-Gain—Bandwidth Product IE= 0.2A; VCE= 10V 15 MHz fT 40 Switching Times ton Turn-On Time tstg Storage Time tf IC=5IB1=-2.5 IB2=2A; VCC= 400V; RL= 200Ω Fall Time SPTECH website：www.superic-tech.com 2 0.5 μs 3.0 μs 0.3 μs