BU508A

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU508A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Power Dissipation: PD= 125W@TC= 25℃ APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU508A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat)★ Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) ★ Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.3 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB= 5.0V ; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 1.0MHz fT 700 V 6 30 125 pF 7 MHz ★:Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % SPTECH website：www.superic-tech.com 2