TIP35C

SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C DESCRIPTION ·DC Current Gain: hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·Complement to Type TIP36C ·Current Gain-Bandwidth Product: fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 1.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.5A 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A 4.0 V VBE(on)-1 Base-Emitter On Voltage IC= 15A ; VCE= 4V 2.0 V VBE(on)-2 Base-Emitter On Voltage IC= 25A ; VCE= 4V 4.0 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 1.0 mA ICES Collector Cutoff Current VCE= 100V;VEB= 0 0.7 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1.5A ; VCE= 4V 25 hFE-2 DC Current Gain IC= 15A ; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V;ftest= 1.0MHz 3 fT CONDITIONS SPTECH website：www.superic-tech.com MIN MAX 100 UNIT V 75 MHz 2