TIP41C

SPTECH Product Specification SPTECH Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C ·Complement to Type TIP42/42A/42B/42C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE TIP41 40 TIP41A 60 TIP41B 80 TIP41C 100 TIP41 40 TIP41A 60 TIP41B 80 TIP41C 100 UNIT V V Emitter-Base Voltage 5 V Collector Current-Continuous 6 A Collector Current-Peak 10 A IB Base Current 2 A PC Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature IC ICM Tstg Storage Temperature Range 65 2 W 150 ℃ -65~150 ℃ SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistors TIP41/41A/41B/41C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) * PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN TIP41 40 TIP41A 60 MAX IC= 30mA; IB= 0 UNIT V TIP41B 80 TIP41C 100 VCE(sat) * Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.6A 1.5 V VBE(on) * Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 V 0.4 mA 0.7 mA 1.0 mA ICES ICEO IEBO TIP41 VCE= 40V; VEB= 0 TIP41A VCE= 60V; VEB= 0 Collector Cutoff Current TIP41B VCE= 80V; VEB= 0 TIP41C VCE=100V; VEB= 0 TIP41/41A VCE=30V; IB= 0 TIP41B/41C VCE= 60V; IB= 0 Collector Cutoff Current Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1* DC Current Gain IC=0.3A ; VCE=4V 30 hFE-2* DC Current Gain IC= 3A ; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V 3 fT 75 MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% SPTECH website：www.superic-tech.com 2