TIP147P

SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor TIP147P DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type TIP142 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor TIP147P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.5 V V BE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -1 mA ICEO Collector Cutoff current VCE= -50V, IB= 0 -2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 500 -100 UNIT V Switching Times td Delay Time tr Rise Time tstg tf Storage Time VCC= -30 V, IC= - 5.0 A, IB = -20 mA; Duty Cycle≤20% IB1 = IB2, RC & RB Varied, TJ = 25℃ Fall Time SPTECH website：www.superic-tech.com 0.15 μs 0.55 μs 2.5 μs 2.5 μs 2