TIP147T

SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(sus)= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat) = -2.0 V (Max) @ IC = -3.0 A APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous -0.2 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case SPTECH website：www.superic-tech.com MAX UNIT 1.92 ℃/W 1 SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor TIP147T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -0.2 mA ICEO Collector Cutoff Current VCE= -50V; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE DC Current Gain IC= -3A ; VCE= -3V SPTECH website：www.superic-tech.com MIN TYP. MAX -100 UNIT V 750 2