MJE15029

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) ·High Current Gain-Bandwidth Product: fT= 30MHz(Min)@ IC= -0.5A ·DC current gain : hFE = 40 (Min) @IC= -3.0 A : hFE = 20 (Min) @IC= -4.0 A ·Complement to Type MJE15028 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -16 A IB Base Current -2 A PC Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ 2 50 W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A -0.5 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -2V -1.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -10 μA ICEO Collector Cutoff Current VCE= -120V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -0.1A ; VCE= -2V 40 hFE-2 DC Current Gain IC= -2A ; VCE= -2V 40 hFE-3 DC Current Gain IC= -3A ; VCE= -2V 40 hFE-4 DC Current Gain IC= -4A ; VCE= -2V 20 Current Gain-Bandwidth Product IC= -0.5A;VCE= -10V; ftest= 10MHz 30 fT CONDITIONS SPTECH website：www.superic-tech.com MIN MAX -120 UNIT V MHz 2