MJE15030

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15030 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V(Min) ·High Current Gain-Bandwidth Product: fT= 30MHz(Min)@ IC= 0.5A ·DC current gain : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJE15031 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 2 A PC Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2 50 W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistors MJE15030 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A 0.5 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 2V 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 150V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V 40 hFE-2 DC Current Gain IC= 2A ; VCE= 2V 40 hFE-3 DC Current Gain IC= 3A ; VCE= 2V 40 hFE-4 DC Current Gain IC= 4A ; VCE= 2V 20 Current Gain-Bandwidth Product IC= 0.5A;VCE= 10V; ftest= 10MHz 20 fT CONDITIONS SPTECH website：www.superic-tech.com MIN MAX 150 UNIT V MHz 2