2SD884

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD884 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max) @IC= 0.5A ·High speed switching APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 10 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD884 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=0.5A 1.2 V ICBO Collector Cutoff Current VCB= 330V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 4V Fall Time IC= 5A , IB1= IB2= 800mA RB=0.5Ω,-VEB=5V tf SPTECH website：www.superic-tech.com 10 45 0.75 μs 2