2SC2581

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2581 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SA1106 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2581 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 3A; VCE= 4V Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 20 MHz Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 250 pF fT COB CONDITIONS SPTECH website：www.superic-tech.com MIN TYP. MAX 140 UNIT V 30 2