SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3300
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A
APPLICATIONS
·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Peak
25
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3300
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 80mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 80mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 15V ; IC= 0
10
μA
hFE
DC current gain
IC= 5A ; VCE= 1V
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
fT
CONDITIONS
SPTECH website:www.superic-tech.com
MIN
TYP.
MAX
50
UNIT
V
60
360
18
MHz
2
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