2SD717

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD717 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation : PC= 80W @TC=25℃ APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 2.5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SD717 SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 70V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE -1 DC Current Gain IC= 1A ; VCE= 1V 70 hFE -2 DC Current Gain IC= 6A ; VCE= 1V 30 Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 10 MHz Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 350 pF 0.3 μs 2.5 μs 0.4 μs fT COB CONDITIONS MIN TYP. MAX 50 UNIT V 240 Switching times ton Turn-on Time tstg Storage Time tf  IC= 6A , IB1= IB2= 0.3A; RL= 5Ω;VCC= 30V; PW = 20μs;Duty Cycle≤1% Fall Time hFE-1 Classifications O Y 70-140 120-240 SPTECH website：www.superic-tech.com 2