2SD844

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD844 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation : PC= 60W @TC=25℃ ·Complement to Type 2SB754 APPLICATIONS ·High current switching applications ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous 7 A Collector Power Dissipation @ Ta=25℃ 2.5 Collector Power Dissipation @ TC=25℃ 60 Junction Temperature 150 ℃ -55~150 ℃ PC TJ Tstg Storage Temperature Range W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SD844 SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.2 0.4 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 1V 0.9 1.2 V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE -1 DC Current Gain IC= 1A ; VCE= 1V 70 hFE -2 DC Current Gain IC= 4A ; VCE= 1V 30 Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 15 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 250 pF fT COB  CONDITIONS MIN TYP. MAX UNIT 240 hFE-1 Classifications O Y 70-140 120-240 SPTECH website：www.superic-tech.com 2