2SA1106

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SC2581 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SA1106 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -140V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -3A; VCE= -4V Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V fT CONDITIONS MIN TYP. MAX -140 UNIT V 30 20 MHz 0.3 μs 0.9 μs 0.2 μs Switching Times tr tstg tf Rise Time Storage Time IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V Fall Time SPTECH website：www.superic-tech.com 2