2SA1141

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1141 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -115V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2681 APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -115 V VCEO Collector-Emitter Voltage -115 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A Collector Power Dissipation @ Ta=25℃ 2.0 Collector Power Dissipation @ TC=25℃ 100 Junction Temperature 150 ℃ -55~150 ℃ PC TJ Tstg Storage Temperature Range W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SA1141 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -4.5A; IB= -0.45A -1.5 V VBE(on) Base-Emitter On Voltage IC= -4.5A; VCE= -2V -2.0 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -1A; VCE= -2V 60 hFE-2 DC Current Gain IC= -4.5A; VCE= -2V 40 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 390 pF Current-Gain—Bandwidth Product IC= -1A; VCE= -2V 90 MHz fT  PARAMETER 200 hFE-1 Classifications R Q 60-120 100-200 SPTECH website：www.superic-tech.com 2