2SA1186

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1186 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -2 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SA1186 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -80V;f= 1.0MHz 110 pF Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 60 MHz 0.25 μs 0.8 μs 0.2 μs fT CONDITIONS MIN TYP. MAX -150 UNIT V 50 180 Switching times ton Turn-on Time tstg Storage Time tf  IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V Fall Time hFE Classifications O P Y 50-80 80-130 130-180 SPTECH website：www.superic-tech.com 2