2SA1232

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -130V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3012 APPLICATIONS ·For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SA1232 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -5.0A; IB= -0.5A -1.5 V Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -2A; VCE= -5V 60 hFE-2 DC Current Gain IC= -5A; VCE= -5V 40 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 250 pF Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 60 MHz fT  CONDITIONS MIN TYP. 320 hFE-1 Classifications R Q P 60-120 100-200 160-320 SPTECH website：www.superic-tech.com 2