2SA1940

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous -0.8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 hFE-2 DC Current Gain IC= -4A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 260 pF Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 30 MHz fT  CONDITIONS MIN TYP. MAX -120 UNIT V 160 hFE-1 Classifications R O 55-110 80-160 SPTECH website：www.superic-tech.com 2