2SB817

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB817 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047 APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse -15 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SB817 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base -Emitter On Voltage IC= -1A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC=0 -100 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 60 hFE-2 DC Current Gain IC= -6A ; VCE= -5V 20 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 300 pF Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 15 MHz 0.25 μs 1.61 μs 0.53 μs fT CONDITIONS MIN TYP. MAX UNIT 200 Switching times ton Turn-on Time tstg Storage Time tf  Fall Time IC= -1A ,RL= 20Ω, IB1= -IB2= -0.1A,VCC=-20V hFE-1 Classifications D E 60-120 100-200 SPTECH website：www.superic-tech.com 2