2SB863

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB863 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SB863 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -140V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 hFE-2 DC Current Gain IC= -5A; VCE= -5V 25 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF Current-Gain—Bandwidth Product IC=-1A; VCE= -10V 15 MHz fT  CONDITIONS MIN TYP. MAX -140 UNIT V 160 hFE-1 Classifications R O 55-110 80-160 SPTECH website：www.superic-tech.com 2