BD250

SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(Min)- BD250C ·Complement to Type BD249/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage (RBE= 100Ω) Collector-Emitter Voltage VALUE BD250 -55 BD250A -70 BD250B -90 BD250C -115 BD250 -45 BD250A -60 BD250B -80 BD250C -100 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB Base Current -5 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case SPTECH website：www.superic-tech.com MAX UNIT 1.0 ℃/W 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD250 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT -45 BD250A -60 IC= -30mA; IB= 0 V BD250B -80 BD250C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A; IB= -1.5A -1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -5A -4.0 V VBE(on)-1 Base-Emitter On Voltage IC= -15A; VCE= -4V -2.0 V VBE(on)-2 Base-Emitter On Voltage IC= -25A; VCE= -4V -4.0 V -0.7 mA -1.0 mA -1.0 mA ICES ICEO Collector Cutoff Current Collector Cutoff Current BD250 VCE= -55V; VBE= 0 BD250A VCE= -70V; VBE= 0 BD250B VCE= -90V; VBE= 0 BD250C VCE= -115V; VBE= 0 BD250/A VCE= -30V;IB= 0 BD250B/C VCE= -60V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1.5A; VCE= -4V 25 hFE-2 DC Current Gain IC= -15A; VCE= -4V 10 hFE-3 DC Current Gain IC= -25A; VCE= -4V 5 Switching times ton Turn-on Time toff Turn-off Time IC= -5A; IB1= -IB2= -0.5A; RL= 5Ω; VBE(off)= -5V SPTECH website：www.superic-tech.com 0.2 μs 0.4 μs 2