MJ11016

SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11015 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A IB Base Current-Continunous 1 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 200 ℃ -55~+200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.87 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor MJ11016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 30A; IB= 0.3A 5.0 V ICBO Collector Cutoff Current VCB=120V; IE=0 VCB=120V;IE=0; TC=150℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 120V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 20A, VCE= 5V 1000 hFE-2 DC Current Gain IC= 30A, VCE= 5V 200 SPTECH website：www.superic-tech.com MIN TYP. MAX 120 UNIT V 2