MJ11015

SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor MJ11015 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to the NPN MJ11016 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -30 A IB Base Current-Continunous -1 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 200 ℃ -55~+200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.87 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor MJ11015 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -30A; IB= -0.3A -5.0 V ICBO Collector Cutoff Current VCB=-120V; IE=0 VCB=-120V; IE=0; TC=150℃ -1.0 -5.0 mA ICEO Collector Cutoff Current VCE= -120V; IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -20A, VCE= -5V 1000 hFE-2 DC Current Gain IC= -30A, VCE= -5V 200 SPTECH website：www.superic-tech.com MIN TYP. MAX -120 UNIT V 2