SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3866
DESCRIPTION
·High Breakdown Voltage
: V(BR)CBO= 900V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.0
℃/W
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3866
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
1.0
μs
4.0
μs
0.8
μs
10
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
IC= 2A , IB1= 0.4A; IB2= -0.8A
RL=150Ω;
PW=20μs; Duty≤2%
Fall Time
SPTECH website:www.superic-tech.com
2
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