BU2508A

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU2508A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU2508A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A 5.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.29A 1.0 V Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.7A 1.3 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 6 hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V 4 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz VBE(sat) SPTECH website：www.superic-tech.com 26 80 pF 2