TIP152

SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP152 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in automotive ignition,switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current- Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case SPTECH website：www.superic-tech.com MAX UNIT 1.56 ℃/W 1 SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP152 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA, IE= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A, IB= 10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A, IB= 100mA 1.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A, IB= 250mA 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A, IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A, IB= 250mA 2.3 V C-E Diode Forward Voltage IF= 7A 3.5 V ICEO Collector Cutoff current VCE= 400V, IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 15 mA hFE-1 DC Current Gain IC= 2.5A; VCE= 5V 150 hFE-2 DC Current Gain IC= 5A; VCE= 5V 50 hFE-3 DC Current Gain IC= 7A; VCE= 5V 15 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 150 pF VF CONDITIONS MIN TYP. MAX UNIT Switching Times td Delay Time tr Rise Time tstg tf Storage Time Fall Time SPTECH website：www.superic-tech.com VCC = 250V, IC = 5.0 A, IB1= -IB2= 250mA; tp= 20μs Duty Cycle≤2% 0.03 μs 0.18 μs 3.5 μs 1.6 μs 2