2SC3710

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1452 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 1V 70 hFE-2 DC Current Gain IC= 6A ; VCE= 1V 40 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz 220 pF Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 80 MHz 0.2 μs 1.0 μs 0.2 μs fT CONDITIONS MIN TYP. MAX 80 UNIT V 240 Switching Times ton Turn-on Time tstg Storage Time tf  IC= 6A ,IB1= -IB2= 0.3A, VCC= 30V, RL= 5Ω Fall Time hFE-1 Classifications O Y 70-140 120-240 SPTECH website：www.superic-tech.com 2