2SA1452

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1452 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous -2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1452 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A -1.2 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V ; IC= 0 -10 μA hFE-1 DC Current Gain IC= -1A ; VCE= -1V 70 hFE-2 DC Current Gain IC= -6A ; VCE= -1V 40 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz 400 pF Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 50 MHz 0.3 μs 1.0 μs 0.5 μs fT CONDITIONS MIN TYP. MAX -80 UNIT V 240 Switching Times ton Turn-on Time tstg Storage Time tf  IC= -6A ,IB1= -IB2= -0.3A, VCC= -30V, RL= 5Ω Fall Time hFE-1 Classifications O Y 70-140 120-240 SPTECH website：www.superic-tech.com 2