2N6678

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N6678 DESCRIPTION ·High Voltage Capability ·Fast Switching Speed ·Low Saturation Voltage APPLICATIONS Designed for high voltage switching applications such as: ·Off-line power supplies ·Converter circuits ·PWM regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 650 V VCEX Collector-Emitter Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5.0 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N6678 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3.0A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3.0A 1.5 V IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 2.0 mA hFE DC Current Gain IC= 15A ; VCE= 3V 8.0 Current Gain-Bandwidth Product IC= 1.0A ; VCE= 10V; ftest=5.0MHz 3.0 Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz fT COB CONDITIONS MIN MAX 400 UNIT V MHz 500 pF 0.2 μs 0.6 μs 2.5 μs 0.6 μs Switching times td Delay Time tr Rise Time ts Storage Time tf Fall Time IC= 15A , VCC= 200V,IB1= -IB2= 3A, tp=20μs, Duty Cycle≤2.0% VBB=6V, RL=13.5Ω SPTECH website：www.superic-tech.com 2