SPT50N65F1A

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer VCE 650 V and high avalanche ruggedness for motion IC 50 A control, solar application and welding machine. VCE(SAT) IC=50A 1.8 V low switching losses, high energy efficiency FEATURES  High breakdown voltage up to 650V for improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Short circuit withstand time – 5s  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Inverter  Welding Converters  PFC applications  Converter with high switching frequency Product SPT50N65F1A Package TO247 Packaging Tube http://www.superic-tech.com 1 2018.10 / Rev3.4 SPT50N65F1A Maximum Ratings （Tj= 25℃ unless otherwise specified） Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 650 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 100 50 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 100 50 A 150 A Turn off safe operating area VCE ≤650V, Tj ≤ 150°C Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V Tsc 5 μs Power dissipation , Tj=25℃ Ptot 260 W -40...+150 °C -55...+150 °C 260 °C Operating junction temperature Tj Ts Storage temperature Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Thermal Resistance Parameter Symbol Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.48 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.1 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 2018.10 / Rev3.4 SPT50N65F1A Electrical Characteristics （Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max Unit - V Static VGE=0V , IC=250uA 650 VGE=0V , IC=1mA 650 VGE(th) VGE=VCE, IC=250uA 4.0 VCE(sat) VGE=15V, IC=50A Tj = 25°C Tj = 150°C Collector-Emitter Breakdown Voltage BVCES Gate Threshold Voltage Collector-Emitter Saturation Voltage Zero gate voltage collector current ICES VCE = 650V, VGE = 0V Tj = 25°C Tj = 150°C Gate-emitter leakage current IGES VCE = 0V, VGE = 20V Transconductance gfs VCE = 20V, IC = 50A Parameter Symbol Conditions - - Min V 5.0 6.0 V 1.8 2.1 2.3 V V 0.1 40 1000 μA 100 nA - S Max Unit 30 Typ Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current http://www.superic-tech.com IC（SC） 2800 VCE = 30V, VGE = 0V, f = 1MHz 130 pF 75 VCC = 960V, IC = 40A, VGE = 15V - 180 - nC VGE=15V,tSC≤5us VCC=400V, Tj，start=25°C - 310 - A 3 2018.10 / Rev3.4 SPT50N65F1A Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit td(on) - 40 - ns tr - 22 - ns - 180 - ns - 88 - ns Dynamic Tj=25C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12Ω Turn-on Energy Eon - 1.9 - mJ Turn-off Energy Eoff - 1.1 - mJ td(on) - 40 - tr - 25 - - 195 - - 100 - Dynamic Tj=150C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12Ω ns ns ns ns Turn-on Energy Eon - 2.2 - mJ Turn-off Energy Eoff - 1.25 - mJ Max Unit Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ - 2.4 - V - 90 - ns - 17 - A - 900 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 50A IF= 40A, VR = 300V, di/dt= 600A/μs, 4 2018.10 / Rev3.4 SPT50N65F1A Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 140 100 120 tP = 10μs 100 50μs 110℃ 10 80℃ IC(A) IC(A) 100μs 500μs 1ms 80 60 DC 1 40 20 D=0.5, VCE=400V, VGE=0/15V, Rg=12Ω，Tj ≤150C Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 1 1000 10 100 Fig. 3 Power dissipation as a function of TC Fig. 4 collector current as a function of TC 300 120 250 100 200 80 IC (A) Ptot(W) 1000 f (KHz) VCE(V) 150 60 100 40 50 20 VGE=15V , Tj ≤150C Tj ≤150C 0 0 25 50 75 100 125 25 150 TC(℃) 50 75 100 125 150 TC(℃) http://www.superic-tech.com 5 2018.10 / Rev3.4 SPT50N65F1A Fig. 5 Output characteristics Fig. 6 Saturation voltage characteristics 150 150 VGE = 20V 140 140 130 17V 130 150℃ 120 15V 120 25℃ 110 13V 110 100 100 11V 90 9V 80 70 IC(A) IC(A) 90 7V 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 4 5 VGE = 15V 0 1 2 VCE(V) 4 5 6 VCE(V) Fig. 7 Switching times vs. gate resistor Fig. 8 Switching times vs. collector current 1000 1000 td(off) td(off) tf tf td(on) td(on) tr tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 3 100 100 Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ Common Emitter VCC = 400V, VGE = 15V, IC=50A Ta=25℃ 10 10 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 60 70 80 90 100 110 IC(A) 6 2018.10 / Rev3.4 SPT50N65F1A Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current 6 6 Eoff Eon 5 5 4 4 Switching loss (mJ) Switching loss (mJ) Eoff Eon 3 2 3 2 1 1 Common Emitter VCC = 400V, VGE = 15V, IC=50A Ta=25℃ Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ 0 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 20 30 40 50 60 70 80 90 100 110 Ic (A) Rg (Ω) Fig. 11 Gate charge characteristics Fig. 12 Capacitance characteristics 10000 15 Ciss(pF) 130V Coss(pF) 520V Crss(pF) 12 Capacitance 1000 VGE (V) 9 6 100 3 Common Emitter IC= 50A ,Ta=25℃ Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 0 10 0 50 100 150 200 0 Qg (nC) http://www.superic-tech.com 10 20 30 VCE(V) 7 2018.10 / Rev3.4 SPT50N65F1A http://www.superic-tech.com 8 2018.10 / Rev3.4