SPT10N120T1

SPT10N120T1 1200V /10A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 10 A VCE(SAT) IC=10A 1.60 V improved reliability  Trench-Stop Technology offering :  very tight parameter distribution  high ruggedness, temperature stable behavior  Short circuit withstand time – 10s  High ruggedness, temperature stable  Low VCE(SAT)  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche capability APPLICATION  Frequency Converters  Motor Drive Product SPT10N120T1 Package TO247 Packaging Tube http://www.superic-tech.com 1 2019.01 / Rev3.2 SPT10N120T1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 20 10 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 20 10 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 40 A Pulsed collector current, VGE= 15V, tp limited by Tjmax ICM 40 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25°C Ptot 260 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.69 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.5 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 Unit 2019.01 / Rev3.2 SPT10N120T1 Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min Typ Max Uni t Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 - - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.2 5.8 6.8 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=10A Tj = 25°C Tj = 150°C - 1.60 1.95 1.95 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - μA - 100 1000 Gate-emitter leakage current IGES VCE = 0V, VGE = ± 20V - - 100 nA Transconductance gfs VCE = 20V, IC = 10A - S Parameter Symbol Conditions - 10 Min Typ - 1510 - - 50 - - 18 - - 84 - Max Unit Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG http://www.superic-tech.com VCE = 25V, VGE = 0V, f = 1MHz VCC = 960V, IC = 15A, VGE = 15V 3 pF nC 2019.01 / Rev3.2 SPT10N120T1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit Dynamic , at Tj = 25°C Turn-on delay Time td(on) - 22 - ns tr - 15 - ns - 70 - ns - 77 - ns 1.20 - mJ 0.17 - mJ Rise Time Turn-off delay time VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12Ω td(off) Fall time tf Turn-on Energy Eon Turn-off energy Eoff - Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Dynamic Symbol Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com Conditions IF = 10A IF= 15A, di/dt= 600A/μs 4 Min Typ Max Unit - 2.3 - V - 270 - ns - 10 - A - 1800 - nC 2019.01 / Rev3.2 SPT10N120T1 Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 45 100 40 35 50μs 25 标题 IC(A) 80℃ 30 tP = 10μs 10 100μs 500μs 20 1ms 1 15 DC 110℃ 10 VCE=600V, VGE=0/15V, Rg=12Ω，Tj ≤ 150C 5 Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 VCE(V) 100 10 f(kHz) 1 1000 Fig. 3 Output characteristics 100 Fig. 4 Saturation voltage characteristics 50 45 25℃ 40 150℃ 40 35 VGE = 20V 17V 30 15V IC(A) 30 25 IC(A) 13V 11V 20 20 9V 15 10 10 5 VGE = 15V 0 0 0 1 2 V (V) 3 CE http://www.superic-tech.com 4 5 0 5 1 2 VCE(V) 3 4 5 6 2019.01 / Rev3.2 SPT10N120T1 Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1000 100 100 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ Common Emitter VCC =600V, VGE = 15V, IC=10A Ta=25℃ 10 10 0 5 0 10 15 20 25 30 35 40 45 50 55 10 20 30 40 50 IC(A) Rg (Ω) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 1000 9 Eoff Eon td(off) 8 tf td(on) 7 6 Switching loss (mJ) t, SWITCHING TIMES [ns] tr 100 5 4 3 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ 2 Common Emitter VCC =600V, VGE = 15V, IC=10A Ta=25℃ 1 0 10 0 5 0 10 15 20 25 30 35 40 45 50 55 Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 60 Ic (A) 6 2019.01 / Rev3.2 SPT10N120T1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 15 10000 240V Ciss(pF) 640V Coss(pF) Crss(pF) 960V 12 Capacitance 1000 VGE (V) 9 6 100 3 Common Emitter IC= 15A ,Ta=25℃ Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 10 0 0 50 0 100 20 30 VCE(V) Qg (nC) http://www.superic-tech.com 10 7 2019.01 / Rev3.2 SPT10N120T1 http://www.superic-tech.com 8 2019.01 / Rev3.2