SPT15N120F1

SPT15N120F1A 1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, VCE 1200 V IC 15 A VCE(SAT) IC=15A 1.9 V microwave oven, etc. FEATURES  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Soft current turn-off waveforms  Enhanced avalanche capability APPLICATION  Inductive cooking  Inverterized microwave ovens  Resonant converters  Soft switching applications http://www.superic-tech.com 1 2018.06 / Rev3.1 SPT15N120F1A Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 30 15 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 30 15 A Pulsed collector current, tp limited by Tjmax ICpuls 45 A Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C - 45 A Operating junction temperature Tj - -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.7 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.5 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 Unit 2018.06 / Rev3.1 SPT15N120F1A Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min. Typ. Max. Unit 1200 - - V 5.1 5.8 6.4 V Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA ① Gate threshold voltage VGE(th) VGE=VCE, IC=250μA Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=15A Tj = 25°C Tj = 150°C - 1.9 2.3 2.3 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 100 1000 μA - Gate-emitter leakage current IGES VCE = 0V, VGE = 20V - - 100 nA Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG VCE = 25V, VGE = 0V, f = 1MHz VCC = 600V, IC = 15A, VGE = 15V - 1655 - - 72 - - 35 - - 101 - pF nC Switching Characteristic, Inductive Load Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic , at Tj = 25°C Turn-off delay time td(off) Fall time Turn-off energy tf Eoff VCC = 600V, IC = 15A, VGE = 0/15V, Rg=12Ω - 80 - ns - 200 - ns - 0.28 - mJ Note： ① BVces testing without filter could damage the device. BVces is guaranteed by Ices@1200V test. http://www.superic-tech.com 3 2018.06 / Rev3.1 SPT15N120F1A Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 15A IF= 10A, di/dt= 200A/μs 4 - 2.3 - V - 70 - ns - 5 - A - 1600 - nC 2018.06 / Rev3.1 SPT15N120F1A http://www.superic-tech.com 5 2018.06 / Rev3.1